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| STFV3N150 STP3N150 - STW3N150 N-channel 1500V - 8 - 2.5A - TO-220 - TO-220FH - TO-247 Very high voltage PowerMESHTM Power MOSFET Features Type STP3N150 STFV3N150 STW3N150 VDSS 1500V 1500V 1500V RDS(on) <12 <12 <12 ID 2.5A 2.5A 2.5A Pw 140W 30W 140W TO-220 1 2 3 1 2 3 TO-220FH 100% avalanche tested Avalanche ruggedness Gate charge minimized Very low intrinsic capacitances High speed switching TO-247 Description Using the well consolidated high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances. The strengthened layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics. Internal schematic diagram Application Switching application Order codes Part number STP3N150 STFV3N150 STW3N150 Marking 3N150 3N150 3N150 Package TO-220 TO-220FH TO-247 Packaging Tube Tube Tube May 2007 Rev 3 1/15 www.st.com 15 Contents STFV3N150 - STP3N150 - STW3N150 Contents 1 2 3 4 5 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test circuits .............................................. 6 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/15 STFV3N150 - STP3N150 - STW3N150 Electrical ratings 1 Electrical ratings Table 1. Symbol VDS VGS ID ID IDM (2) Absolute maximum ratings Value Parameter TO-220/TO-247 TO-220FH Drain-source voltage (VGS = 0) Gate- source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 100C Drain current (pulsed) Total dissipation at TC = 25C Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s;TC=25C) Derating factor 2.5 1.575 10 140 -1.12 -55 to 150 1500 30 2.5 (1) 1.575 10 (1) Unit V V A A A W V W/C C (1) PTOT VISO 30 2500 0.24 Tj Tstg Operating junction temperature Storage temperature 1. Limited by maximum temperature allowed 2. Pulse width limited by safe operating area Table 2. Symbol Thermal data Parameter TO-220/TO-247 TO-220FH 0.89 62.5 300 4.17 Unit C/W C/W C/W Rthj-case Thermal resistance junction-case Max Rthj-amb Thermal resistance junction-ambient Max Tj Maximum lead temperature for soldering purpose Table 3. Symbol IAR EAS Avalanche characteristics Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting Tj = 25C, ID = IAR, VDD = 50V) Max value 2.5 360 Unit A mJ 3/15 Electrical characteristics STFV3N150 - STP3N150 - STW3N150 2 Electrical characteristics (Tcase =25C unless otherwise specified) Table 4. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on On /off states Parameter Drain-source breakdown voltage Test conditions ID = 1mA, VGS = 0 Min. 1500 10 500 100 3 4 8 5 12 Typ. Max. Unit V A A nA V VDS = Max rating Zero gate voltage drain current (VGS = 0) VDS = Max rating, TC=125C Gate-body leakage current (VDS = 0) VGS = 30V Gate threshold voltage VDS = VGS, ID = 250A Static drain-source on resistance VGS = 10V, ID = 1.3A Table 5. Symbol gfs (1) Ciss Coss Crss Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Test conditions VDS = 30V, ID = 1.3A Min. Typ. 2.6 939 102 13.2 100 Max. Unit S pF pF pF pF VDS = 25 V, f = 1 MHz, VGS = 0 Coss eq. (2) Equivalent output capacitance Rg Qg Qgs Qgd Gate input resistance Total gate charge Gate-source charge Gate-drain charge VDS=0V to 1200, VGS = 0 f=1MHz Gate DC Bias=0 Test signal level=20mV open drain VDD = 1200V, ID = 2.5A, VGS = 10V (see Figure 18) 4 29.3 4.6 17 nC nC nC 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/15 STFV3N150 - STP3N150 - STW3N150 Electrical characteristics Table 6. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions VDD = 750V, ID = 1.25A, RG = 4.7, VGS = 10V (see Figure 17) Min. Typ. 24 47 45 61 Max Unit ns ns ns ns Table 7. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 2.5A, VGS = 0 ISD = 2.5A, di/dt = 100A/s VDD= 60V Tj = 25C (see Figure 19) ISD = 2.5A, di/dt = 100A/s VDD= 60V Tj = 150C (see Figure 19) 410 2.4 11.7 540 3.3 12.3 Test conditions Min. Typ. Max Unit 2.5 10 1.6 A A V ns C A ns C A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300s, duty cycle 1.5% 5/15 Electrical characteristics STFV3N150 - STP3N150 - STW3N150 2.1 Figure 1. Electrical characteristics (curves) Safe operating area for TO-220 Figure 2. Thermal impedance for TO-220 Figure 3. Safe operating area for TO-220FH Figure 4. Thermal impedance for TO-220FH Figure 5. Safe operating area for TO-247 Figure 6. Thermal impedance for TO-247 6/15 STFV3N150 - STP3N150 - STW3N150 Figure 7. Output characteristics Figure 8. Electrical characteristics Transfer characteristics Figure 9. Normalized BVDSS vs. temperature Figure 10. Static drain-source on resistance Figure 11. Gate charge vs. gate-source voltage Figure 12. Capacitance variations 7/15 Electrical characteristics Figure 13. Normalized gate threshold voltage vs. temperature STFV3N150 - STP3N150 - STW3N150 Figure 14. Normalized on resistance vs. temperature Figure 15. Source-drain diode forward characteristics Figure 16. Maximum avalanche energy vs Tj 8/15 STFV3N150 - STP3N150 - STW3N150 Test circuits 3 Test circuits Figure 18. Gate charge test circuit Figure 17. Switching times test circuit for resistive load Figure 19. Test circuit for inductive load Figure 20. Unclamped Inductive load test switching and diode recovery times circuit Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform 9/15 Package mechanical data STFV3N150 - STP3N150 - STW3N150 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/15 STFV3N150 - STP3N150 - STW3N150 Package mechanical data TO-220 MECHANICAL DATA DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 oP Q 11/15 Package mechanical data STFV3N150 - STP3N150 - STW3N150 TO-220FH (Fully plastic High voltage) MECHANICAL DATA DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 L8 L9 15.9 9 14.5 2.4 28.6 9.8 3.4 16.4 9.3 15 0.626 0.354 0.570 0.094 4.4 2.5 2.5 0.45 0.75 1.3 1.3 4.95 2.4 10 16 30.6 10.6 1.126 0.385 0.134 0.645 0.366 0.590 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.8 1.8 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.051 0.051 0.195 0.094 0.393 0.630 1.204 0.417 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.070 0.070 0.204 0.106 0.409 P011W 12/15 STFV3N150 - STP3N150 - STW3N150 Package mechanical data TO-247 MECHANICAL DATA mm. MIN. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620 DIM. A A1 b b1 b2 c D E e L L1 L2 oP oR S 13/15 Revision history STFV3N150 - STP3N150 - STW3N150 5 Revision history Table 8. Date 12-Jan-2007 17-Apr-2007 14-May-2007 Revision history Revision 1 2 3 First release Added new value on Table 5. The document has been reformatted Changes 14/15 STFV3N150 - STP3N150 - STW3N150 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 15/15 |
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